| 摘要 |
PURPOSE:To obtain a device without an imbalance load action by a method wherein a pair of main electrodes are provided to both front and back surfaces of a semiconductor substrate which has at least one P-N junction and the maximum roughness of unevenness of the sides, which have contact with the main electrodes, of slipping compensation plates, via which the conductors are pressed and got contact to the surfaces of the substrate, is made smaller than the thickness of the main electrodes. CONSTITUTION:Bevel processing is worked upon P-N junctions exposed at the sides of an Si substrate 1 which has P-N-P-N four-layer semicoductor layers to reduce field intensity and the processed parts are protected by silicon rubber layers 8. Then a cathode electrode 3 is provided via a control electrode 9 to one surface of the substrate 1 and an anode electrode 2 is provided to another surface of the substrate 1. Slipping compensation plates 5 and 4 which have unevenness of their contacting sides are provided for the electrodes 3 and 2 respectively. After that these compensation plates 5 and 4 are pressed by conductors 7 and 6 respectively and flanges 13 and 12 provided to the respective circumferences are soldered to a ceramic seal 14. In this composition, the maximum roughness of unevenness of the compensation plates 5 and 4 is determined less than the thickness of the electrodes 3 and 2. |
