Semiconductor device and electronic device

摘要

To reduce a variation in the electrical characteristics of a transistor. A potential generated by a voltage converter circuit is applied to a back gate of a transistor included in a voltage conversion block. Since the back gate of the transistor is not in a floating state, a current flowing through the back channel can be controlled so as to reduce a variation in the electrical characteristics of the transistor. Further, a transistor with low off-state current is used as the transistor included in the voltage conversion block, whereby storage of the output potential is controlled.

主权项

1. A semiconductor device comprising:
a power source circuit comprising:
a voltage converter circuit configured to generate a potential by using a first clock signal, the voltage converter circuit comprising a first transistor; and a CPU core comprising:
a register comprising:
a selector;a first memory circuit configured to store data, the first memory circuit being supplied with a second clock signal; anda second memory circuit configured to store the data output from the first memory circuit, the second memory circuit comprising a second transistor and a first capacitor, wherein an output terminal of the selector is electrically connected to an input terminal of the first memory circuit, wherein an input terminal of the selector is electrically connected to an output terminal of the second memory circuit, wherein each of the first transistor and the second transistor comprises a channel formation region comprising an oxide semiconductor, wherein a gate of the first transistor is electrically connected to one of a source and a drain of the first transistor, wherein a back gate of the first transistor is electrically connected to the one of the source and the drain of the first transistor, wherein one of a source and a drain of the second transistor is electrically connected to the first capacitor, and wherein a back gate of the second transistor is supplied with the potential.