| 发明名称 |
Method of increasing cell retention capacity of silicon nitride read-only-memory cell |
| 摘要 |
A method of increasing the cell retention capacity of a silicon nitride read-only-memory on a wafer. The method includes carrying out a baking process after performing the last plasma treatment of the wafer but before a wafer sort test.
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| 申请公布号 |
US7132302(B2) |
申请公布日期 |
2006.11.07 |
| 申请号 |
US20040709603 |
申请日期 |
2004.05.17 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHUANG KUEN-CHI;LIU CHEN-CHIN;CHEN JIONG-ZHONG |
| 分类号 |
H01L21/00;H01L21/28;H01L21/66 |
主分类号 |
H01L21/00 |
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