发明名称 |
SEMICONDUCTOR LASER |
摘要 |
<p>In a semiconductor laser comprising a terrace-shaped semiconductor substrate, a first clad layer formed on the semiconductor substrate, an active layer formed on the first clad layer and having two discontinuity places at bending portions of the first clad layer, a second clad layer formed on the active layer, and a current injection electrode above a lasing region in the active layer, the improvement is that a stable fundamental transverse lasing mode and a circular laser beam are obtainable from the lasing region definitely separated by two discontinuity places in the active layer.</p> |
申请公布号 |
CA1163350(A) |
申请公布日期 |
1984.03.06 |
申请号 |
CA19800360407 |
申请日期 |
1980.09.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUGINO, TAKASHI;WADA, MASARU;SHIMIZU, HIROKAZU;ITOH, KUNIO |
分类号 |
H01S5/00;H01S5/223;(IPC1-7):H01S3/18 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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