| 摘要 |
<p>PURPOSE:To increase the speed of reading operation by forming the device by a plurality of word lines, a digit line, a common source line and a resistance means. CONSTITUTION:A memory array MARY is constituted by a plurality of FAMOS transistors F1-F256, the word lines W1-W256 and the digit lines D1-Dn. The control gates of the FAMOS transistors F arranged in the same line are each connected in common with the corresponding word lines W1-W256, and the drains of the FAMOS transistors F arranged in the same row are each connected in common with the corresponding digit lines D1-Dn. the sources of the FAMOS transistors F constitute a common source line SL by being integrally formed by a common semiconductor region, and are divided. The source line is divided into the common source lines SL1-SL4 of the FAMOS transistors at every memory array MARY1-MARY4 relating to common digit lines CD1- CD4, and depletion type MOSFETs Q1-Q4 as the resistance means are each formed to each common source line SL1-SL4.</p> |
