| 摘要 |
PURPOSE:To reduce a gate trigger current without lowering a critical OFF voltage rising rate by forming an N type region having the same depth as an N type region directly under a cathode electrode on a P type region between a gate electrode and a cathode electrode. CONSTITUTION:P type regions 3, 4 are formed on both side surfaces of an N type substrate 2, and N type regions are formed in the regions 3, 4. The N type regions in the region 4 have an N type region 5 directly under a gate electrode 14 and an N type region 6 directly under a main electrode, and the region 6 has a structure that the region 4 is partially protruded. An N type region 21 having the same depth as the regions 5, 6 is formed in the P type region between the regions 5 and 6, a gate current is flowed downwardly of the region 4, thereby eliminating a current which does not contribute to the turning ON. |
