| 摘要 |
PURPOSE:To obtain easily a laser element and a photo waveguide path which is buried hetero structure by a method wherein a crystal layer, which is Eg1<Eg2, is disposed on or under a superlattice layer, which is effective forbidden bandwidth Fg1, and is irradiated by laser which has intermediate photon energy between Eg1 and Eg2 in a part of region. CONSTITUTION:An n type AlaGa1-aAs(Eg2) 12, AlAs/GaAs superlattice active layer (Eg1) 132 and p type AlbGa1-bAs(Eg2) 14 are performed epitaxially grown on an n type GaAs substrate 11. After that, the left and right portion of the above substrate are irradiated from the upper of the substrate with photon energy EL whose laser ray is Eg1<EL<Eg2 and is anealed and is mixcrystalized to superlattice and becomes AldGa1-dAs 152. As the result, the formula is established as follow. Eg1=E132<EL<E152<E14 and the structure of the buried hetero laser and waveguide path is accomplished. By this constitution, the high output buried hetero laser and waveguide path, which are operated at low threshold electric current and oscillation mode is stabilized, by a simple process, and obtained. |
