| 摘要 |
<p>A basic cell (10) for a carrier of semiconductor wafers to permit high-volume, cold wall chemical vapor deposition, including plasma-enhanced CVD (Fig. 3A). The basic cell (10) has two surfaces, each bearing a wafer or wafers facing and tapering toward each other. Process gases are passed from the wider gap to the narrower gap between the surfaces. Basic cells (20) may be arranged to form a circular carrier with process gases flowing inward to the center of the carrier for a high volume CVD reactor (Fig. 3B). The basic cell may also be used for plasma etching reactors.</p> |
