| 摘要 |
PURPOSE:To obtain a MIS semiconductor device, which can write and read and has small power consumption, by utilizing a charge coupled phenomenon in the MIS semiconductor device. CONSTITUTION:A film 2 consisting of an insulator SiO2 is formed onto one main surface of an silicon n-type substrate 1, Al is applied onto the whole surface of the film 2, and a conductive layer 3 is shaped through selective etching. The conductive layer 3 is heated and treated, and the surface containing the upper surface and side surface of the conductive layer is oxidized to form a thin Al2O3 film 6. One part of the SiO2 film 2, which adjoins to the Al2O3 and is not coated with the film 6, is removed selectively through etching by applying a photoetching mask 7 to expose one part of the substrate 1, and a conduction type (p) region 4 with a p-n junction J is shaped through a diffusion method or an ion implantation method by an impurity having the conduction type (p) different from the conductive type of the substrate to the exposed substrate 1. A second conductor layer such as an Al layer 5 is formed so that it is brought into ohmic-contact with the surface of the p-type region and one part thereof is applied onto the side surface and one part of the upper surface of the Al2O3 film 6. |
