SIC SINGLE CRYSTAL SEED, SIC INGOT, SIC SINGLE CRYSTAL SEED PRODUCTION METHOD, AND SIC SINGLE CRYSTAL INGOT PRODUCTION METHOD

摘要

This SiC single crystal seed includes: a main surface having an offset angle of 2-20º with respect to the {0001} surface; and at least one sub growth surface. The sub growth surface includes an initial facet forming surface which is on the offset upstream side from the main surface, and for which the inclination angle θ with respect to the {0001} surface is, by absolute value, less than 2º in any direction. The initial facet forming surface includes a screw dislocation generation point of origin.