| 摘要 |
PURPOSE:To form a relief hologram not to be peeled from a base even at the time of low exposure by constituting the developing process of a process for executing development by means of an aq. alkaline solution and a process for executing dipping processing by means of dioxane. CONSTITUTION:A pattern is exposed to a negative photoresist layer formed on a base and capable of being developed with the aq. alkaline solution, dipped into an aq. alkaline developing solution, and then dipped into dioxane. A solution obtained by dissolving unexposed photoresist is used as the aq. alkaline developing solution and a component having no dissolving function is preferable for a polymer part bridged by exposure. In the dipping processing, a relief hologram formed in a low exposure area separated from the base is left and the depth of the relief hologram can be increased. Thus, the relief hologram not to be peeled from the base can be formed even at the low exposure and a sufficiently satisfied result for the diffraction grating which is essential characteristics for the hologram can be obtained.
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