| 摘要 |
<p>This invention concerns a method and an apparatus for measuring and testing the electric characteristic of a semiconductor device in a non-contact fashion. For conducting measurement and testing in a non-contact fashion, an electron beam (21) is used to induce a voltage on a semiconductor device which is an object to be tested (an object to be measured.) By changes with lapse of time of the induced voltage, the electric characteristic, of the semiconductor device are determined. Thus, an electron beam (21) is irridiated to an object to be tested to induce a voltage, thereafter to examine changes in the induced voltage. Then, the electric characteristic of the semiconductor device is measured and tested from the voltage thus induced and the voltage measured thereafter.</p> |
