DATA LINE REPAIR STRUCTURE IN WHICH AUXILIARY DATA LINE AND MAIN DATA LINE ARE FORMED ON THIN FILM TRANSISTOR SUBSTRATE SO AS TO PREVENT INCREASE IN RESISTANCE COMPONENT AND CAPACITOR VALUE,申请号KR19970029367-传众专利搜索

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发明名称	DATA LINE REPAIR STRUCTURE IN WHICH AUXILIARY DATA LINE AND MAIN DATA LINE ARE FORMED ON THIN FILM TRANSISTOR SUBSTRATE SO AS TO PREVENT INCREASE IN RESISTANCE COMPONENT AND CAPACITOR VALUE
摘要
申请公布号	KR100486493(B1)	申请公布日期	2005.04.21
申请号	KR19970029367	申请日期	1997.06.30
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	YANG, DU HEUM
分类号	G02F1/1343;(IPC1-7):G02F1/134	主分类号	G02F1/1343
代理机构		代理人
主权项
地址

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