| 摘要 |
A semiconductor photodetector device comprises an insulating gate field effect transistor having a channel region of a first conductivity type, a gate electrode formed of a semiconductor of the same conductivity type, and a gate extension portion formed of a semiconductor of a second conductivity type, the gate electrode and the gate extension portion forming a photosensitive PN junction not located above the channel region of the transistor and an area including the PN junction being exposable to the incident light.
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