| 摘要 |
Semiconductor device comprising an input-output protecting circuit formed on a SOI substrate, including diodes connected between the signal terminal (50) and the power supply terminals (32,33). Diodes have silicide regions (12) in the cathode and anode regions, separated by an interlayer dielectric film (11); neither gate oxide film nor gate electrode, which deteriorate the ESD resistance, are formed on the surface of the protecting circuit. <IMAGE> |
