发明名称 |
THE SUBSTRATE POTENTIAL GENERATING SYSTEM |
摘要 |
The semiconductor substrate of a first conductivity is provided with a dynamic circuit with a capacitance. A first semiconductor zone of a second conductivity is partly formed on the substrate, while a block parasitic diode is formed at a junction zone between the semiconductor zone and the substrate. An AC signal is supplied to an electrode of a coupler capacitance, whose other electrode is coupled to a further capacitance electrode at a junction. A first rectifier on the first semiconductor zone is conductive. When the junction potential has exceeded a preset value. A second rectifier couples the substrate to the junction and is conductive when the instantaneous value lies outside the potential range. |
申请公布号 |
KR900002691(B1) |
申请公布日期 |
1990.04.23 |
申请号 |
KR19860011232 |
申请日期 |
1986.12.24 |
申请人 |
MITSUBISHI ELECTRIC CO.LTD. |
发明人 |
TOBIDA YOICHI |
分类号 |
H01L27/04;G05F3/20;H01L21/76;H01L21/822;H01L27/02;(IPC1-7):H01L21/76 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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