发明名称 THE SUBSTRATE POTENTIAL GENERATING SYSTEM
摘要 The semiconductor substrate of a first conductivity is provided with a dynamic circuit with a capacitance. A first semiconductor zone of a second conductivity is partly formed on the substrate, while a block parasitic diode is formed at a junction zone between the semiconductor zone and the substrate. An AC signal is supplied to an electrode of a coupler capacitance, whose other electrode is coupled to a further capacitance electrode at a junction. A first rectifier on the first semiconductor zone is conductive. When the junction potential has exceeded a preset value. A second rectifier couples the substrate to the junction and is conductive when the instantaneous value lies outside the potential range.
申请公布号 KR900002691(B1) 申请公布日期 1990.04.23
申请号 KR19860011232 申请日期 1986.12.24
申请人 MITSUBISHI ELECTRIC CO.LTD. 发明人 TOBIDA YOICHI
分类号 H01L27/04;G05F3/20;H01L21/76;H01L21/822;H01L27/02;(IPC1-7):H01L21/76 主分类号 H01L27/04
代理机构 代理人
主权项
地址