SEMICONDUCTOR MEMORY DEVICE

摘要

The semiconductor memory device for removing the soft error comprises: a substrate of first type; a surface charge storage region and a bit line region both of second type; a first gate electrode for the charge storage region; a second gate electrode for the bit line region; insulation layers separating the regions and the gate electrodes; and two high concentration impurity regions adjacent the charge storage and bit line regions forming PN junctions with each.