MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method for manufacturing trench capacitor comprises a first process for forming oxidized layer (11) and a trench on a base (10), a second process for forming insulating layer (13) on side walls of the trench and for forming polysilicon layer (14) on the whole surface, a third process for forming trench (16) by etching back the poly silicon layer (14), a fourth process for filling polysilicon (17) in the trench (16), and a fifth process for etching back the polysilicon (17) for smoothing the layer and for forming polysilicon electrode (18).