| 摘要 |
<p>A stainless steel material useful as a constituent member of semiconductor fabrication apparatuses or high vacuum apparatuses is disclosed. This material has good surface smoothness and cleanliness, does not cause leaching of metal ions, possesses excellent gas release resistance and surface stain resistance, and is scarcely stained due to the deposition of moisture or impurities. This material is prepared from a stainless steel material, having a surface roughness (Rmax) decreased below 1 νm by electrolytic polishing by oxidizing it in a high-temperature oxidative gas atmosphere to thereby form an amorphous oxide film of 75 Å or more in thickness while regulating the ratio of the number of the O-H bond oxygen atoms to that of the total oxygen atoms in said oxide film below 30 %.</p> |
