| 摘要 |
A bipolar type semiconductor device includes a first semiconductor region (101) of a first conductivity type, a second semiconductor region (102) of a second conductivity type formed on the main surface of the first semiconductor region, a third semiconductor region (103) of the second conductivity type formed on the main surface of the second semiconductor region, a fourth semiconductor region (104) of the first conductivity type formed in at least part of the main surface area of the third semiconductor region (103), and a fifth semiconductor region (105) of the second conductivity type formed in at least part of the main surface area of the fourth semiconductor region (104). A low carrier-lifetime layer (110) having a peak of the number of recombination centers of carriers is formed in the second semiconductor region (102). The low carrier-lifetime layer (110) is formed by irradiating high-energy particles such as protons, particles, heavy hydrogen, or hydrogen molecule ions from the rear surface side of the first semiconductor region (101). In a case where the second semiconductor region (102) is not formed, the low carrier-lifetime layer (110) is formed in that part of the third semiconductor region (103) which lies near the junction between the first semiconductor region (101) and the first semiconductor region (103). <IMAGE>
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