发明名称 SINGLE CRYSTAL MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a single crystal manufacturing method capable of manufacturing a single crystal of high quality easily without interrupting the crystal growth of the single crystal even in the case where a bottoming phenomenon occurs.SOLUTION: A method for manufacturing a single crystal 20 comprises: a material molten liquid 23 forming step of heating and melting a single crystal material 23 in a crucible 11 into a material molten liquid 23 by a side face heater 13 and a bottom face heater 14; and a single crystal growing step of bringing a seed crystal 20 into contact with the material molten liquid 23, and then pulling up the seed crystal 20 while rotating the same thereby to grow the single crystal 20. The single crystal growing step includes: a weight change calculation step of measuring and calculating a weight change ΔW per unit time of the single crystal 20 being grown; and a bottoming eliminating step of interrupting the rotation and pull-up of the seed crystal 20 when a decision step of deciding whether or not the change ΔW exceeds a predetermined constant determines that the ΔW has exceeded the predetermined constant, and raising the temperature of the bottom face of the crucible by raising only the output of the bottom face heater 14 of the side face heater 13 and the bottom face heater 14.SELECTED DRAWING: Figure 1
申请公布号 JP2016199417(A) 申请公布日期 2016.12.01
申请号 JP20150079535 申请日期 2015.04.08
申请人 SUMITOMO METAL MINING CO LTD 发明人 KOCHIYA TOSHIO;MURASHITA KENJI;OMI TOSHIYUKI
分类号 C30B15/28 主分类号 C30B15/28
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