| 发明名称 |
Semiconductor device provided with contact through a thick insulating film. |
| 摘要 |
<p>A semiconductor device is provided with a main electrode area of the semiconductor device partially under a thick insulating film (4) formed on the substrate (1). A part of said main electrode area and the wiring are mutually connected electrically through a hole penetrating said thick insulating film on a part of said main electrode area.</p> |
| 申请公布号 |
EP0519352(A2) |
申请公布日期 |
1992.12.23 |
| 申请号 |
EP19920109955 |
申请日期 |
1992.06.12 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
AKINO, YUTAKA |
| 分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/485;H01L23/522;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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