GOLD WIRE FOR BONDING SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a gold wire for bonding a semiconductor device having low electric resistance and superior mechanical strength by adding a specified amount of germanium to gold of a specified high purity. CONSTITUTION:A gold wire for bonding a semiconductor device is manufactured by adding 0.0032-0.008wt% germanium to high purity gold of 99.996-99.9999wt% purity manufactured by electrolytic refining and refining by zone melting. The gold wire has low electric resistance and superior mechanical strength such as tensile strength and strength at high temp. and forms a nearly spherical gold ball.