SINGLE CRYSTAL GROWNING METHOD OF COMPOUND SEMICONDUCTOR METERIAL

摘要

The single crystal growth of a semiconductor by the liquid encapsulated Czochralski method comprises (a) dipping a seed crystal (4) into the primary fused solution (9) with gallium, arsenic and high concentrated impurities, (b) forming the shoulder (15) containing impurities by slowly pulling up, and (c) controlling the concentration of impurities for doping an ingot by smelting the GaAs material rod (14) in the residual solution of the primary fused solution.