| 摘要 |
The bipolar device is mfd. by (a) forming a buried layer (2), an epitaxial layer (3) and an isolated layer (4) on the fixed part of the substrate (1), (b) forming an oxide film (5) on the whole surface, and then selectively etching it to expose a base region, (c) forming an epitaxial layer (6) on the base region, and a polysilicon layer (7) on the film (5), (d) ion-implanting an impurity into the layers (6,7), (e) etching the fixed part of the layer (7) and the film (5) to expose the collector region, (f) forming an oxide film (8), (g) etching the fixed part of the film (8) to expose a base connection region (9), an emitter connection region (10) and a collector connection region (11), (h) ion-implanting an impurity into the regions (10,11) to form an emitter region (13) and a collector region (14), and (i) forming a base electrode (15), an emitter electrode (16) and a collector electrode (17).
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