发明名称 |
Production method of a semiconductor device |
摘要 |
A method for producing a field effect transistor includes depositing an insulating film on an active layer produced in a semiconductor substrate and removing a part of the insulating film, leaving a side wall substantially perpendicular to the substrate. A refractory metal is deposited on the surface of the semiconductor substrate and the insulating film. The refractory metal is removed except for a portion at the side wall of the insulating film to produce a gate electrode. A high dopant concentration region is ion implanted using the insulating film and refractory metal as a mask. The insulating film is removed and an intermediate dopant concentration region is ion implanted using the refractory metal as a mask. A source electrode is produced on the high dopant concentration region and a drain electrode is produced on the intermediate dopant concentration region. The invention may be used to produce asymmetrically doped drain and gate regions and an asymmetrically disposed gate electrode.
|
申请公布号 |
US5250453(A) |
申请公布日期 |
1993.10.05 |
申请号 |
US19920953049 |
申请日期 |
1992.09.29 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOHNO, YASUTAKA;OKU, TOMOKI |
分类号 |
H01L21/033;H01L21/285;H01L21/338;H01L29/08;H01L29/423;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/033 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|