| 摘要 |
The method manufacturing DRAM cell with a diagonal structure includes the steps of forming a field oxide film (22) on an Si substrate (21), depositing a 1st insulating film (23), thereon to remove the film (23), forming a source/drain region (25) to form a side-wall oxide film (24) by n- type ion implantation, forming a semiconductor layer on the film (23) removed portion, forming a gate insulating film to form a word line at the both sides of the semiconductor layer, depositing a 2nd insulating film to form a bit line contact to form a side wall at the 2nd insulating film of the contact portion to implant impurity ions into the semiconductor layer, and removing the 2nd semiconductor layer to form a gate insulating film thereon sequentially to form a barrier contact, a bit line, a storage node, a dielectric layer and a plate node.
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