| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of fully protecting a MOSFET from induced electromotive force.SOLUTION: A semiconductor device of an embodiment comprises: a transistor which can be connected to a load; a first diode provided in a single crystal semiconductor layer and connected between a drain of the transistor and a gate of the transistor in such a manner that a current direction from the gate to the drain becomes a forward direction; an a second diode provided in the single crystal semiconductor layer and connected between the first diode and the gate of the transistor, or between the first diode and the drain of the transistor in such a manner that a forward direction becomes opposite to the forward direction of the first diode.SELECTED DRAWING: Figure 1 |
