发明名称 Photolithography mask prodn. system
摘要 The prodn. system has a transparent electrically conductive film applied to a transparent mask substrate (1), which is then immersed in an electrolyte soln. (5) and displaced relative to the front end of a working electrode (2) in 2 dimensions. The required mask pattern is formed in the mask substrate by the electrochemical reaction obtained when a given voltage is applied across the electrode and the transparent conductive film. Pref. the 2-dimensional mask pattern is formed with a given voltage applied between the electrode and the transparent conductive film, with subsequent electrochemical deposition of an opaque material onto the latter from the electrolytic soln.
申请公布号 DE19529170(A1) 申请公布日期 1996.02.15
申请号 DE19951029170 申请日期 1995.08.08
申请人 SEIKO INSTRUMENTS INC., TOKIO/TOKYO, JP 发明人 SUDA, MASAYUKI, CHIBA, JP;ANDO, AKITO, CHIBA, JP;ATAKA, TATSUAKI, CHIBA, JP
分类号 G03F1/00;(IPC1-7):G03F1/00;B41N1/14;B41M1/06 主分类号 G03F1/00
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