发明名称 |
Corner protected shallow trench isolation device |
摘要 |
A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.
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申请公布号 |
US5521422(A) |
申请公布日期 |
1996.05.28 |
申请号 |
US19940348709 |
申请日期 |
1994.12.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MANDELMAN, JACK A.;MACHESNEY, BRIAN J.;WONG, HING;ARMACOST, MICHAEL D.;PAN, PAI-HUNG |
分类号 |
H01L21/762;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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