| 发明名称 |
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16, a gate insulation layer on the interfacial layer, and a gate electrode on the gate insulation layer. |
| 申请公布号 |
US2016315165(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201514955205 |
申请日期 |
2015.12.01 |
| 申请人 |
LEE Dong-soo;LEE Hu-yong;CHUNG Won-keun;NA Hoon-joo;JEON Taek-soo;HYUN Sang-jin |
发明人 |
LEE Dong-soo;LEE Hu-yong;CHUNG Won-keun;NA Hoon-joo;JEON Taek-soo;HYUN Sang-jin |
| 分类号 |
H01L29/51;H01L29/78;H01L27/092 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit device comprising:
a substrate including an active region; an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16; a gate insulation layer on the interfacial layer; and a gate electrode on the gate insulation layer. |
| 地址 |
Gunpo-si KR |
