| 发明名称 |
Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) |
| 摘要 |
A semiconductor device with an improved insulating and passivating layer including the steps of providing a gallium arsenide substrate with a surface, and crystallographically lattice matching an insulating and passivating layer of indium gallium fluoride on the surface of the gallium arsenide substrate. In one embodiment the semiconductor device is a FET and the layer of indium gallium fluoride covers at least an inter-channel area surrounding the gate.
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| 申请公布号 |
US5539248(A) |
申请公布日期 |
1996.07.23 |
| 申请号 |
US19950555674 |
申请日期 |
1995.11.13 |
| 申请人 |
MOTOROLA |
发明人 |
ABROKWAH, JONATHAN K.;THOMPSON, DANNY L.;WANG, ZHIGUO |
| 分类号 |
H01L29/78;H01L21/28;H01L21/314;H01L21/336;H01L23/29;H01L29/24;H01L29/51;H01L29/80;(IPC1-7):H01L29/04;H01L29/16 |
主分类号 |
H01L29/78 |
| 代理机构 |
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