发明名称 |
Verfahren zum Herstellen einer Belichtungsmaske |
摘要 |
A method for fabricating a light exposure mask, including forming a pattern on a wafer by use of a primary light exposure mask formed with a light shield film pattern in accordance with a design rule, transmitting, to a data comparison system, data obtained after measuring the size of the pattern on the wafer by use of a process defect inspection system, comparing the data with the size of the light shield film pattern, thereby detecting a portion of the pattern on the wafer which has a difference from a critical size value of the light shield film pattern, determining, by use of a compensation equation, an amendment value for a portion of the light shield film pattern which corresponds to the detected portion of the pattern on the wafer, and forming a secondary light exposure mask, based on the amendment value. |
申请公布号 |
DE19611436(A1) |
申请公布日期 |
1996.09.26 |
申请号 |
DE1996111436 |
申请日期 |
1996.03.22 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., ICHON, KYOUNGKI, KR |
发明人 |
BAE, SANG MAN, ICHON, KYOUNGKI, KR |
分类号 |
G03F1/08;G03F1/00;G03F1/36;G03F1/68;G03F1/84;G03F1/86;G03F7/20;H01L21/027;(IPC1-7):G03F1/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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