Method and apparatus for manufacturing chalcopyrite semiconductor thin films

摘要

The method and the apparatus of manufacturing the I-III-VI2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the films during forming the films. The apparatus comprise the substrate holder(2) and heater(3) which are in the vacuum chamber(1) and Mo-coated glass substrate(4) on which Cu(In,Ga)Se2 films(5) are deposited. The change of the substrate temperature is monitored by the use of a heating element(3) to heat the substrate by releasing a certain quantity of heat, a mechanism(6 or 8) of measuring a temperature of the heated substrate. The change of power supplied is monitored by the use of a power source(16) for the heating element(3) to keep the substrate at a certain temperature and a mechanism of monitoring the change of the power supplied to the heating element. The changes in substrate temperature or power supplied can be correlated to the film composition.