发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR CHIP BUMP
摘要 <p>forming a semiconductor substrate(31) stacked with a metal wire(34), an insulator(33), a passivation layer(35) and a barrier metal layer(36) in sequence to prepare a stacked semiconductor chip of the barrier metal layer on the metal wire; depositing a positive first photoresist(32) on top of the barrier metal layer to expose it; depositing a positive second photoresist(37) on top of the exposed first photoresist to expose a pattern mask on the opposite part to the metal wire; developing the first and the second photoresist to plate the developed region; and forming a bump(40) by etching the rest of the first and the second photoresist.</p>
申请公布号 KR960016007(B1) 申请公布日期 1996.11.25
申请号 KR19930001663 申请日期 1993.02.08
申请人 SAMSUNG ELECTRONICS CO.,LTD. 发明人 PARK, CHOON-KEUN
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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