发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR CHIP BUMP |
摘要 |
<p>forming a semiconductor substrate(31) stacked with a metal wire(34), an insulator(33), a passivation layer(35) and a barrier metal layer(36) in sequence to prepare a stacked semiconductor chip of the barrier metal layer on the metal wire; depositing a positive first photoresist(32) on top of the barrier metal layer to expose it; depositing a positive second photoresist(37) on top of the exposed first photoresist to expose a pattern mask on the opposite part to the metal wire; developing the first and the second photoresist to plate the developed region; and forming a bump(40) by etching the rest of the first and the second photoresist.</p> |
申请公布号 |
KR960016007(B1) |
申请公布日期 |
1996.11.25 |
申请号 |
KR19930001663 |
申请日期 |
1993.02.08 |
申请人 |
SAMSUNG ELECTRONICS CO.,LTD. |
发明人 |
PARK, CHOON-KEUN |
分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|