| 摘要 |
PURPOSE: To sufficiently control generation of particle of epitaxial film by providing a gas distributor which assures a thermal conductivity which is equal to the specific value or less to a plurality of gas blowing ports provided to guide the reaction gas to a reaction chamber. CONSTITUTION: A vaper-phase epitaxial film is grown using a gas distributor composed of a porous quartz glass plate having the thernal conductivity of 2Wm<-1> K<-1> or less. In this case, the number of particles (particle number larger than 0.6μm<2> or more) after the growth of epitaxial film is ranged from 30 to 50 pieces/cm<2> which is less than one-half of that generated when a gas distributor made of stainless mesh is used. Thereby, the epitaxial film including less particle can be grown.
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