摘要 |
A semiconductor memory device includes a memory cell array (1) having a plurality of memory cells arranged in rows and columns, a plurality of column select lines (3) extending over the memory cell array and coupled to received column select signals generated by a column decoder (100), a plurality of power supply lines (4) provided in parallel with the column select lines to transfer a power supply voltage from a main power supply line (130), and a plurality of ground lines (5) provided in parallel with the column select lines to transfer a ground voltage from a main ground line. A plurality of fuse elements (6) are provided for each of the column select lines. When a short-circuit is found between a column select line and power supply line or a ground line, a fuse element corresponding to the short-circuited column select line is blown off and the short-circuited column select line is isolated from the column decoder. By repairing the short-circuited column select line with a redundant column select line (60), the memory device operates correctly without an adverse effect of the short-circuit. |
申请人 |
MITSUBISHI ELECTRIC ENGINEERING CO., LTD., TOKIO/TOKYO, JP;MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
ICHIMURA, TOORU, ITAMI, HYOGO, JP;SAKEMI, KAZUHIRO, ITAMI, HYOGO, JP;MORI, SHIGERU, ITAMI, HYOGO, JP;SAKURAI, MIKIO, ITAMI, HYOGO, JP |