发明名称 |
Two-level spiral inductor structure having a high inductance to area ratio |
摘要 |
A high-Q monolithic inductor structure formed using conventional silicon technology and having a first complete lower inductor spiral formed on a substrate and a second complete upper formed on a insulating layer over the first inductor spiral. Central portions of the inductor spirals are connected through a via hole in the insulating layer. The inductor spirals are oriented such that the current flows in the first and second spirals are in the same direction.
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申请公布号 |
US5656849(A) |
申请公布日期 |
1997.08.12 |
申请号 |
US19960594455 |
申请日期 |
1996.01.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BURGHARTZ, JOACHIM NORBERT;JENKINS, KEITH AELWYN;PONNAPALLI, SAILA;SOYUER, MEHMET |
分类号 |
H01L23/522;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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