| 摘要 |
PURPOSE:To enable modification of circuit to be realized by change of a process after the process of formation of a wiring layer, by providing a source/drain diffusion layer and a gate wiring layer constituting an MOS transistor together with a wiring layer within a field cell so that the element can be employed when any change is required for modification of the circuit or the like. CONSTITUTION:In order to provide a circuit as represented by an equivalent circuit of Fig. (a), a NOR gate standard cell 31 and an inverter standard cell 32 are arranged and a required number of feed cells, for example three feed cells 13A-13C are arranged in the cell array. A wiring layer is provided to connect the cells 31, 32 with each other. An LSI can be produced in this manner. If it is desired to add another circuit 25 consisting of an inverter 23 and a NAND gate 24 to the LSI thus produced, as shown in Fig (b), such circuit 25 consisting of the inverter 23 and the NAND gate 24 can be added only by changing the final process, namely process of forming the wiring layer of multilayer aluminum. |
