A STATIC MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME

摘要

A static RAM cell is provided to improve stability of structure and prevent contamination of gate oxide. The static RAM cell including two pass transistors and two pull-down transistors comprises; a spacer(60) form at both sides of a gate oxide(56) and a gate electrode(58a,58b,58c); a resistive load layer(66) connected to a source of the pass transistor and the gate electrode(58a) via a load contact hole(64a); a conductive connecting layer(74b,74c) connected to a drain of the pull-down transistor and the gate electrode(58b) via a gate/drain contact hole(72c); and a bit-line pad layer(74a) for connecting a bit-line to the drain of the pass transistor. The load contact hole(64a) and the gate/drain contact hole(72c) is performed after forming the gate oxide(56), thereby preventing the contamination of gate oxide.