MOS gate controlled power semiconductor component, e.g. power MOSFET or IGBT

摘要

The component consists of several OFF and ignition unity cells, forming a thyristor structure. There are two P-channel MOSFETs (M1, 2), forming a common P plus N junction (J4). The ignition unity cells contain an extra third N-channel depletion MOSFET (M3). The voltage at the P plus N junction is limited in all switching conditions of the first and/or the second MOSFET. Preferably the voltage is kept at a value below the MOSFET breakdown voltage. The P-channel length of the first MOSFET is greater in the ignition cell than in the OFF cell, by at least 1.5.