| 摘要 |
In the operation of a drive circuit of a semiconductor memory device, a signal is selected which is output from an address buffer and a pre-decoder(8) that has the power source level within the certain range, following the selection of the address and an NMOS transistor(MN34) is turned on. At this moment, a PMOS transistor(MP33) is turned on and the word line that is the final output is driven up to the step-up level. On the other hand, when it does not include the selected address, NMOS transistors(MN30-MN33) is turned off and a contact point(33) becomes a high level and accordingly the level of the contact point(34) becomes low by an inverter.
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