| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a zinc oxide film which improves and stabilizes the film quality of the zinc oxide film. SOLUTION: A reactive sputtering device 1 has a plasma forming chamber 21 which forms plasma 2 by using a mixture composed of argon (Ar) 5a and oxygen (O2 ) 5b as reactive gases and receiving micro(μ) waves 22A, a treating chamber 5, an electromagnetic coil 32, a DC power source device 61 for applying negative DC bias potential to a target 6, etc. The treating chamber 5 is internally provided with the target 6 which is made of metal zinc installed to enclose the plasma flow 2A and a substrate stage 52 which is installed to face a plasma introducing hole 51, and contains a heater and carries a work 1A to be deposited with the zinc oxide (ZnO) film. The main film forming conditions of the ZnO film on the work 1A are as follows: The power of theμwaves is 400[W]; the DC bias conditions are 300[V], 150[W]: the reactive gaseous pressure is about 0.13[Pa] and the reactive gas flow rate ratio [Ar/(Ar+O2 )] is 95[%].
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