发明名称 |
Process for producing refractory materials |
摘要 |
A process for the production of refractory materials containing SiALON and carbon or SiALON/SiC and carbon. The process for producing a refractory material containing SiALON and carbon includes heating a molding containing silicon, aluminum, aluminum oxide and carbon to a temperature of 1380 DEG C. at a total atmospheric pressure of less than or equal to 0.1 MPa in an atmosphere containing predominantly nitrogen and containing a concentration of 0 to 5 vol. % of carbon monoxide, subsequently increasing the concentration of carbon monoxide to between 10 and 30 vol. % and heating the molding to a temperature of 1500 DEG C. at a total atmospheric pressure of less than or equal to 0.1 MPa; and subsequently controlling the concentration of carbon monoxide to be between 0 and 10 vol. % and heating the molding to a temperature of 2200 DEG C. at a total atmospheric pressure of greater than or equal to 0.1 MPa. The process for producing a refractory material containing SiALON/SiC and carbon includes heating a molding containing silicon, aluminum, aluminum oxide, and carbon to a temperature of 1500 DEG C. at a total atmospheric pressure of less than or equal to 0.1 MPa in an atmosphere containing predominantly nitrogen and containing a concentration of 10 to 30 vol. % of carbon monoxide; and subsequently controlling the concentration of carbon monoxide to be between 20 and 50 vol. % and heating the molding to a temperature of 2200 DEG C. at a total atmospheric pressure of greater than or equal to 0.1 MPa.
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申请公布号 |
US5718866(A) |
申请公布日期 |
1998.02.17 |
申请号 |
US19960613011 |
申请日期 |
1996.03.08 |
申请人 |
DOLOMITWERKE GMBH |
发明人 |
RICHTER, HANS-JUERGEN;SCHOBER, REINER;PUTZKY, GERHARD;KOENIG, GERT |
分类号 |
C04B35/597;C04B35/599;C04B35/65;(IPC1-7):C04B35/599 |
主分类号 |
C04B35/597 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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