发明名称 METHOD FOR FABRICATING NANOGAP ELECTRODES, NANOGAP ELECTRODES ARRAY, AND NANODEVICE WITH THE SAME
摘要 A substrate 1 having metal layers 2A and 2B arranged to form a gap is dipped in an electroless plating solution mixed an electrolyte solution including metal ions with a reducing agent and a surfactant. Metal ions are reduced by the reducing agent to be precipitated on the metal layers 2A and 2B, and the surfactant is adhered to a surface of the metal on the metal layers, thereby forming a pair of electrodes 4A, 4B to be controlled to have a nanometer sized gap. These steps enable to provide a method for fabricating nanogap electrodes, a nanogap electrodes array, and a nanodevice with the same.
申请公布号 US2016300915(A1) 申请公布日期 2016.10.13
申请号 US201615069879 申请日期 2016.03.14
申请人 Majima Yutaka;Teranishi Toshiharu;Muraki Taro;Tanaka Daisuke 发明人 Majima Yutaka;Teranishi Toshiharu;Muraki Taro;Tanaka Daisuke
分类号 H01L29/41;H01L29/66;H01L21/288;H01L29/76 主分类号 H01L29/41
代理机构 代理人
主权项 1. A nanodevice, comprising: one and the other electrodes provided to have a nanogap; a metal nanoparticle provided between the one and the other electrodes; and a monolayer provided on at least the one and the other electrodes.
地址 Yokohama-shi JP