发明名称 |
METHOD FOR FABRICATING NANOGAP ELECTRODES, NANOGAP ELECTRODES ARRAY, AND NANODEVICE WITH THE SAME |
摘要 |
A substrate 1 having metal layers 2A and 2B arranged to form a gap is dipped in an electroless plating solution mixed an electrolyte solution including metal ions with a reducing agent and a surfactant. Metal ions are reduced by the reducing agent to be precipitated on the metal layers 2A and 2B, and the surfactant is adhered to a surface of the metal on the metal layers, thereby forming a pair of electrodes 4A, 4B to be controlled to have a nanometer sized gap. These steps enable to provide a method for fabricating nanogap electrodes, a nanogap electrodes array, and a nanodevice with the same. |
申请公布号 |
US2016300915(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615069879 |
申请日期 |
2016.03.14 |
申请人 |
Majima Yutaka;Teranishi Toshiharu;Muraki Taro;Tanaka Daisuke |
发明人 |
Majima Yutaka;Teranishi Toshiharu;Muraki Taro;Tanaka Daisuke |
分类号 |
H01L29/41;H01L29/66;H01L21/288;H01L29/76 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
1. A nanodevice, comprising:
one and the other electrodes provided to have a nanogap; a metal nanoparticle provided between the one and the other electrodes; and a monolayer provided on at least the one and the other electrodes. |
地址 |
Yokohama-shi JP |