| 摘要 |
PROBLEM TO BE SOLVED: To prevent the disconnection of a gate electrode caused by stress migration by constituting a multilayered structure containing one or more sets of an A film, a particle size suppressing film, and an A film and specifying the thickness of each A film. SOLUTION: A gate electrode 5 is constituted in a multilayered structure containing one or more sets of a first Al film which works as a Schottky metal, a particle size suppressing film composed at least of one element selected from among a group composed of Mo, W, Ta, and Cr, and another Al film successively formed on the first Al film from the channel side. The thickness of the first Al film and each Al film in the sets are adjusted to <=4,000Å. Therefore, the probability of disconnection along grain boundaries caused by stress migration becomes smaller even when a tensile stress is applied to the gate electrode 5 due to the stresses of insulating films 7 and 9, etc., after the electrode 5 is formed. On the other hand, this structure is not adopted to wiring layer 6, 8, and 10. because the electromigration resistances of the layers 6, 8, and 10 drop.
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