| 发明名称 |
Protecting Layer in a Semiconductor Structure |
| 摘要 |
A method for forming a protecting layer includes determining an expected concentration of metal ions in a dielectric layer. The method also includes determining a thickness of the protecting layer based on the expected concentration of metal ions. The method also includes forming the protecting layer at the determined thickness and in contact with the dielectric layer. The protecting layer can include at least one of silicon doped nitride, carbon nitride, silicon nitride, or silicon carbon. |
| 申请公布号 |
US2016300760(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201615183548 |
申请日期 |
2016.06.15 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Teng Chi-Lin;Chen Hai-Ching;Bao Tien-I |
| 分类号 |
H01L21/768;H01L23/532;H01L23/522 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a protecting layer, the method comprising:
determining an expected concentration of metal ions in a dielectric layer; based on the expected concentration of metal ions, determining a thickness of the protecting layer; and forming the protecting layer at the determined thickness and in contact with the dielectric layer. |
| 地址 |
Hsin-Chu TW |
