Method for forming interconnection structures

摘要

The present invention provides a method for forming interconnection structures, including the following steps: providing a semiconductor wafer with a dielectric layer; forming a first recessed area for forming the interconnection structures and a non-recessed area on the dielectric layer; forming a second recessed area for forming dummy structures on the dielectric layer; depositing a barrier layer to cover the first and second recessed areas and the non-recessed area; depositing a metal layer to fill the first and second recessed areas and cover the non-recessed area; removing the metal layer on the non-recessed area to expose the barrier layer; and removing the barrier layer on the non-recessed area to expose the dielectric layer.

主权项

1. A method for forming interconnection structures, comprising:
providing a semiconductor water with a dielectric layer; forming a first recessed area for forming the interconnection structures and a non-recessed area on the dielectric layer; forming a second recessed area for forming dummy structures on the dielectric layer; depositing a barrier layer to cover the first and second recessed areas and the non-recessed area; depositing as metal layer to fill the first and second recessed areas and cover the non-recessed area; removing the metal layer on the non-recessed area to expose the barrier layer, wherein removing the metal layer includes using an electropolishing method and the dummy structures prevent the barrier layer from being oxidized; and removing the harrier layer on the non-recessed area to expose the dielectric layer.