发明名称 HIGH FREQUENCY POWER AMPLIFIER MODULE
摘要 PROBLEM TO BE SOLVED: To provide a small-sized high-frequency amplifier module that is operated at two different frequencies and optimum to a portable telephone set having provision for a dual band. SOLUTION: A DC bias circuit 30 of a high frequency power amplifier module is made up of transmission lines M11 and M12 and capacitive elements C11 and C12 . One terminal A of the transmission line M11 connects to a voltage source terminal Vdd and the other end connects to an output matching circuit 40. One end C of the transmission line M12 connects to a ground terminal and the other end D connects to the other end B via the capacitive element C11 . The capacitive element C12 connects between the voltage source terminal and the ground terminal. Length of lines L11 , L12 between the A and B and between the C and D are selected within a range of 0.106-0.178 wavelength or below with respect to the lower operating frequency f0 . The C11 is selected between 0.35/(2πf0 .Z0 ) and 0.5/(2πf0 .Z0 ), where Z0 is a characteristic impedance of each transmission line.
申请公布号 JPH11112249(A) 申请公布日期 1999.04.23
申请号 JP19970271180 申请日期 1997.10.03
申请人 HITACHI LTD 发明人 KAGAYA OSAMU;SEKINE KENJI;NUNOKAWA YASUHIRO
分类号 H03F3/60;(IPC1-7):H03F3/60 主分类号 H03F3/60
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