IGBT semiconductor body between two main surfaces

摘要

The source regions (7) form an emitter ballast resistor is so large that a potential difference between a potential of the P-base (6) and a potential of the source regions, max. equal to the inate potential of the PN-junction formed by the P-base and the source regions. The N-base (5) between two unit cells extends to the second main surface (3). Over the latter is insulatingly located a control electrode (8), covering a channel (9) whose regions are formed by the source regions and the N-base. A first main electrode (10) contacts the P-region (4), while a second one (11) contacts the P-base and the source regions.